Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices.Comment: 20 pages, 6 Figure

Nano-structured transmissive spectral filter matrix based on guided-mode resonances

Background: In this work, a nanostructured guided-mode resonance filter matrix with high transmission efficiency and narrow bandwidth is demonstrated. The developed nano-filter arrays have various usages, e.g., combined with the CMOS image sensors to realize compact spectrometers for biomedical sensing applications. Methods: In order to optimize the filter performance, the spectral responses of filters with different structural parameters are carefully studied based on the variable-controlling method. A quality factor is carried out for quantitative characterization. Results: In this case, a high fill factor of 0.9 can strongly suppress sidebands, while buffer layer thickness can be adjusted to mainly control the bandwidth. The transmission peaks shift from 386 nm to 1060 nm with good linearity when periods vary from 220 nm to 720 nm. The incident angle dependence is simulated to be ~ 1.1 nm/degree in ±30° range. The filters are then fabricated and characterized. The results obtained from both simulations and experiments agree well, where the filters with the period of 352 nm exhibit simulated and measured transmission peaks of 564 nm and 536 nm, the FWHM of 13 nm and 17 nm, respectively. In terms of metal material, besides aluminum, silver is also investigated towards optimization of the transmission efficiency. Conclusion: The transmission spectra of designed filters have high transmission and low sideband; its peaks cover the whole visible and near infrared range. These characteristics allow them to have the possibility to be integrated into image sensors for spectrometer applications

Co-Nanomet: Co-ordination of Nanometrology in Europe

Nanometrology is a subfield of metrology, concerned with the science of measurement at the nanoscale level. Today’s global economy depends on reliable measurements and tests, which are trusted and accepted internationally. It must provide the ability to measure in three dimensions with atomic resolution over large areas. For industrial application this must also be achieved at a suitable speed/throughput. Measurements in the nanometre range should be traceable back to internationally accepted units of measurement (e.g. of length, angle, quantity of matter, and force). This requires common, validated measurement methods, calibrated scientific instrumentation as well as qualified reference samples. In some areas, even a common vocabulary needs to be defined. A traceability chain for the required measurements in the nm range has been established in only a few special cases. A common strategy for European nanometrology has been defined, as captured herein, such that future nanometrology development in Europe may build out from our many current strengths. In this way, European nanotechnology will be supported to reach its full and most exciting potential. As a strategic guidance, this document contains a vision for European nanometrology 2020; future goals and research needs, building out from an evaluation of the status of science and technology in 2010. It incorporates concepts for the acceleration of European nanometrology, in support of the effective commercial exploitation of emerging nanotechnologies. The field of nanotechnology covers a breadth of disciplines, each of which has specific and varying metrological needs. To this end, a set of four core technology fields or priority themes (Engineered Nanoparticles, Nanobiotechnology, Thin Films and Structured Surfaces and Modelling & Simulation) are the focus of this review. Each represents an area within which rapid scientific development during the last decade has seen corresponding growth in or towards commercial exploitation routes. This document was compiled under the European Commission Framework Programme 7 project, Co-Nanomet. It has drawn together input from industry, research institutes, (national) metrology institutes, regulatory and standardisation bodies across Europe. Through the common work of the partners and all those interested parties who have contributed, it represents a significant collaborative European effort in this important field. In the next decade, nanotechnology can be expected to approach maturity, as a major enabling technological discipline with widespread application. This document provides a guide to the many bodies across Europe in their activities or responsibilities in the field of nanotechnology and related measurement requirements. It will support the commercial exploitation of nanotechnology, as it transitions through this next exciting decade

Versatile sputtering technology for Al2O3 gate insulators on graphene

We report a novel, sputtering-based fabrication method of Al2O3 gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2 V− 1 s−1 in monolayer graphene and 350 cm2 V− 1 s−1 in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering